Song, Ki-Bong Lee, Sang-Su Kim, Kyung-Am Suh, Jeong-Dae Kim, Jun-Ho Lee, Taek-Sung Cheong, Byung-Ki Kim, Won-Mock 2024-01-21T01:00:50Z 2024-01-21T01:00:50Z 2021-09-02 2007-06-25 0003-6951 https://pubs.kist.re.kr/handle/201004/134314 A technique to develop an undoped homojunction chalcogen thin-film transistor (UHJ-c-TFT) on glass is described. The UHJ-c-TFT is based on ternary chalcogenide alloy amorphous (alpha) Ge2Sb2Te5 (GST) and the positively cooled crystalline (chi) GST. The alpha-GST and the positively cooled chi-GST are used as a channel layer and ohmic contact layer, respectively. In the UHJ-c-TFT, the authors realize electric rectification by the energy difference from the Fermi level of the alpha-GST and the Fermi level of the positively cooled chi-GST. The UHJ-c-TFT shows the clear gate characteristics of a typical p-channel enhancement mode. (c) 2007 American Institute of Physics. English AMER INST PHYSICS Undoped homojunction chalcogen thin-film transistors on glass Article 10.1063/1.2753102 1 APPLIED PHYSICS LETTERS, v.90, no.26 APPLIED PHYSICS LETTERS 90 26 scie scopus 000247625500090 2-s2.0-34547272846 Physics, Applied Physics Article chalcognide thin-film transistor Ge2Sb2Te5