김재정 김수길 강민철 구효철 조성기 여종기 2024-01-21T01:01:27Z 2024-01-21T01:01:27Z 2021-09-06 2007-06 1229-1935 https://pubs.kist.re.kr/handle/201004/134342 The transition of interconnection metal from aluminum alloy to copper has been introduced to meet therequirements of high speed, ultra-large scale integration, and high reliability of the semiconductor device. Since cop-per, which has low electrical resistivity and high resistance to degradation, has diferent electrical and material char-copper interconnection. In this review, some important factors of multilevel copper damascene process have beensurveyed such as diffusion barier, sed layer, organic additives for bottom-up electro/electroless deposition, chemicalmechanical polishing, and capping layer to introduce the related issues and recent research trends on them. Korean 한국전기화학회 전해 도금을 이용한 기가급 소자용 구리배선 공정 Cu Metallization for Giga Level Devices Using Electrodeposition Article 2 전기화학회지, v.10, no.2, pp.94 - 103 전기화학회지 10 2 94 103 kci ART001072202 Device Copper Interconnection Electrodeposition Damascene