Kononenko, O.V. Noh, Y.S. Kim, T.W. Choi, W.K. 2024-01-21T01:01:40Z 2024-01-21T01:01:40Z 2021-09-02 2007-06 1063-7397 https://pubs.kist.re.kr/handle/201004/134353 Nitrogen-doped ZnO films are grown on (0001)-oriented sapphire substrates by magnetron RF sputtering in an Ar-NO plasma at a pressure of about 10 mTorr and Ar-to-NO flow-rate ratios of 0-90. It is revealed that the nitrogen concentration in the films depends on the Ar-to-NO flow-rate ratios as well as on the nitrogen concentration in the process environment. The highest doping level of nitrogen (4.3 at %) is achieved in films deposited at a substrate temperature of 300°C and an Ar-to-NO flow-rate ratio of 90:1. These films are found to contain Zn-N bonds, but not N-O bonds. ？ Nauka/Interperiodica 2007. English Argon Chemical bonds Magnetron sputtering Nitrogen compounds Nitrogen oxides Plasmas Sapphire Substrates Ar-NO plasma Doping level Nitrogen-doped ZnO films Zinc oxide Nitrogen concentration in ZnO films grown by magnetron sputtering in an Ar-NO plasma Article 10.1134/S1063739707010039 1 Russian Microelectronics, v.36, no.1, pp.27 - 32 Russian Microelectronics 36 1 27 32 scopus 2-s2.0-33846782587 Article Argon Chemical bonds Magnetron sputtering Nitrogen compounds Nitrogen oxides Plasmas Sapphire Substrates Ar-NO plasma Doping level Nitrogen-doped ZnO films Zinc oxide ZnO nitrogen concentration Ar-NO plasma magnetron souttering