Jung, K. Lee, J.-K. Im, H. Karpinski, L. Scholz, M. Lee, J.-K. 2024-01-21T01:01:42Z 2024-01-21T01:01:42Z 2021-09-02 2007-06 1225-0562 https://pubs.kist.re.kr/handle/201004/134354 Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mather-typed plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed freer grain structure at lower pressure. Korean Materials Research Society of Korea Dependence of gas pressure on Cr Oxide thin film growth using a plasma focus device Article 10.3740/MRSK.2007.17.6.308 1 Korean Journal of Materials Research, v.17, no.6, pp.308 - 312 Korean Journal of Materials Research 17 6 308 312 scopus kci ART001059700 2-s2.0-34548046046 Article Cr oxide thin film Deposition Ion emission Plasma focus Working pressure