Oh, Do-Hyun Lee, Soojin Cho, Woon-Jo Kim, Jae-Ho Kim, Tae Whan 2024-01-21T01:01:52Z 2024-01-21T01:01:52Z 2021-09-02 2007-06 0374-4884 https://pubs.kist.re.kr/handle/201004/134362 The charge storage in a nano-floating gate consisting of Si nanocrystals (Si-NCs) embedded in a SiO2 layer formed on a Si substrate by using a sonochemical method was investigated. The transmission electron microscopy image and the photoluminescence spectrum showed that Si-NCs were embedded in a SiO2 layer. The capacitance-voltage curves and the electrostatic force microscopy (EFM) images showed that charge storage appeared in the Si-NCs embedded in a SiO2 layer. The EFM images for the Si-NCs embedded in a SiO2 layer under positive and negative voltages showed that electrons and holes were captured in the Si-NCs. The present results indicate that EFM images provide promising evidence for charge storage in Si-NCs embedded in a SiO2 layer. English KOREAN PHYSICAL SOC SILICON NANOCRYSTALS MEMORY CHARACTERISTICS CHARGE INJECTION NANOPARTICLES ENERGY DOTS Electron and hole storage in a floating gate consisting of Si nanocrystals embedded in a SiO2 layer Article 10.3938/jkps.50.1755 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1755 - 1759 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 50 6 1755 1759 scie scopus kci ART001194422 000247326800028 2-s2.0-34547283477 Physics, Multidisciplinary Physics Article; Proceedings Paper SILICON NANOCRYSTALS MEMORY CHARACTERISTICS CHARGE INJECTION NANOPARTICLES ENERGY DOTS Si nanocrystals sonochemical method charge storage