Kim, Jin Soak Kim, Eun Kyu Song, Jin Dong Lee, Jung Il 2024-01-21T01:02:10Z 2024-01-21T01:02:10Z 2021-08-31 2007-06 0374-4884 https://pubs.kist.re.kr/handle/201004/134376 We have investigated the electrical properties of digital-alloy AlGaAs on GaAs by using capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) methods. During molecular beam epitaxy growth, digital-alloy and analogue-alloy samples were prepared. The digital-alloy layer consists of hundreds of AlAs and GaAs layers each thickness of 2 monolayers. Most properties of the digital alloy were similar to the analogue alloy, but some electrical properties from these of digital-alloy were quite different to the analogue-alloy from the C-V and low-temperature DLTS measurements. Especially, the superlattice structures slightly interrupt carrier motion at low temperatures (< 80 K); then, a signal whose origin seems to be a hetero barrier of the GaAs/AlGaAs quantum well is found, and its average activation energy is estimated to be about 45 meV. English KOREAN PHYSICAL SOC OPTICAL-PROPERTIES ROOM-TEMPERATURE LASERS Electrical properties of digital-alloy (AlxGa1-x)As/GaAs during molecular beam epitaxy growth Article 10.3938/jkps.50.1912 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1912 - 1915 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 50 6 1912 1915 scie scopus kci ART001063280 000247326800061 2-s2.0-34547349040 Physics, Multidisciplinary Physics Article; Proceedings Paper OPTICAL-PROPERTIES ROOM-TEMPERATURE LASERS digital-alloy superlattices MBE AlAs/GaAs deep-level transient spectroscopy