Kim, Kyungkon Henry, Tania Cui, George Han, Jung Song, Yoon-Kyu Nurmikko, Arto V. Tang, Hong 2024-01-21T01:02:12Z 2024-01-21T01:02:12Z 2021-08-31 2007-06 0370-1972 https://pubs.kist.re.kr/handle/201004/134377 Homo-epitaxialy grown aligned GaN nanowires were prepared on crystalline GaN mesas. The GaN nanowires showed preferential growth along the (10 (1) over bar0) direction (m-axis direction). By using selectively positioned and crystallographically well defined GaN epitaxial lateral overgrowth (ELO) mesas as substrate, we obtained horizontally aligned GaN nanowires, in comb-like arrays and hexagonal network interconnecting the ELO mesas. Preliminary testing of the nanomechanical behavior of horizontal nanowires is reported. Combination of ELO with nanowire synthesis is expected to provide a new paradigm for nanoelectronic and electromechanical devices. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. English WILEY-V C H VERLAG GMBH GALLIUM NITRIDE NANOWIRES CHEMICAL-VAPOR-DEPOSITION CATALYTIC SYNTHESIS MOVPE Epitaxial growth of aligned GaN nanowires and nanobridges Article 10.1002/pssb.200674843 1 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.244, no.6, pp.1810 - 1814 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 244 6 1810 1814 scie scopus 000247328200011 2-s2.0-34250321757 Physics, Condensed Matter Physics Article; Proceedings Paper GALLIUM NITRIDE NANOWIRES CHEMICAL-VAPOR-DEPOSITION CATALYTIC SYNTHESIS MOVPE GaN nanowire