Shin, J. W. Lee, J. Y. No, Y. S. Jung, J. H. Kim, T. W. Choi, W. K. 2024-01-21T01:04:00Z 2024-01-21T01:04:00Z 2021-09-02 2007-04-30 0003-6951 https://pubs.kist.re.kr/handle/201004/134439 The plane-view high-resolution transmission electron microscopy (HRTEM) images in ZnO thin films grown on p-Si substrates showed that (10 $(1) over bar $0) asymmetric grain boundaries with a periodic array of strain contrast features existed in a sparse columnar structure for as- grown ZnO thin films and that (11 $(2) over bar $0) asymmetric grain boundaries and (851 $(3) over bar $0) symmetric grain boundaries existed in a dense columnar structure for annealed ZnO thin films. The atomic arrangement variations of [0001]- tilt grain boundaries in ZnO thin films grown on Si substrates due to thermal treatment are described on the basis of the HRTEM results. (c) 2007 American Institute of Physics. English AMER INST PHYSICS ELECTRONIC-STRUCTURE SAPPHIRE LASERS Atomic arrangement variations of [0001]-tilt grain boundaries in ZnO thin films grown on p-Si substrates due to thermal treatment Article 10.1063/1.2732177 1 APPLIED PHYSICS LETTERS, v.90, no.18 APPLIED PHYSICS LETTERS 90 18 scie scopus 000246210000038 2-s2.0-34247873099 Physics, Applied Physics Article ELECTRONIC-STRUCTURE SAPPHIRE LASERS grain boundary p-Si ZnO TEM