Byeun, Yun-Ki Han, Kyong-Sop Choi, Heon-Jin Choi, Sung-Churl 2024-01-21T01:04:20Z 2024-01-21T01:04:20Z 2021-09-02 2007-04-15 0921-5093 https://pubs.kist.re.kr/handle/201004/134453 We report on the optical and magnetic properties of single crystalline dilute magnetic semiconductor Ga1-xMnxN nanowires. The nanowires were fabricated by chemical vapor transport process, and had diameters of < 100 nm and length of several mu m. Controlled doping of manganese in the range of x = 0.01-0.08 was successfully achieved by varying the processing conditions. X-ray diffraction and transmission electron microscopy observation showed that the nanowires are single crystalline without any secondary phases. Photoluminescence emissions of all the doped nanowires were red-shifted (2.8 eV) compare to pure gallium nitride nanowires (3.3 eV) at room temperature. Ferromagnetism up to room temperature was observed in GaN1-xMnxN nanowires with x > 0.04. (c) 2006 Published by Elsevier B.V. English ELSEVIER SCIENCE SA MN FERROMAGNETISM FILMS Controlled doping of single crystalline diluted magnetic semiconductor Ga1-xMnxN nanowires Article 10.1016/j.msea.2006.10.071 1 MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, v.452, pp.499 - 502 MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING 452 499 502 scie scopus 000245639800067 2-s2.0-33847250409 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Science & Technology - Other Topics Materials Science Metallurgy & Metallurgical Engineering Article MN FERROMAGNETISM FILMS III-V group semiconductors Mn doped GaN one-dimensional nanostructure nanowires dilute magnetic semiconductors