Kim, Han-Ki Kim, Sang-Woo Kim, Do-Geun Kang, Jae-Wook Kim, Myung Soo Cho, Woon Jo 2024-01-21T01:04:31Z 2024-01-21T01:04:31Z 2021-09-02 2007-04-09 0040-6090 https://pubs.kist.re.kr/handle/201004/134460 The characteristics of an SiNx passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of similar to 10(11) electronS/cm(3) formed by nine straight antennas connected in parallel, a high-density SiN, passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 degrees C. Even at a low substrate temperature, single SiN, passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 x 10(-2) g/m(2)/day and a transparency of similar to 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiNx layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiN, deposition process. (c) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA SURFACE PASSIVATION DEVICES DEGRADATION CATHODE LAYERS Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition Article 10.1016/j.tsf.2006.11.030 1 THIN SOLID FILMS, v.515, no.11, pp.4758 - 4762 THIN SOLID FILMS 515 11 4758 4762 scie scopus 000245259600034 2-s2.0-33847226312 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article SURFACE PASSIVATION DEVICES DEGRADATION CATHODE LAYERS ICP-CVD straight antenna TOLED SiNx