Sohn, Jaecheon Han, S. H. Yamaguchi, Masahiro Lim, S. H. 2024-01-21T01:04:33Z 2024-01-21T01:04:33Z 2021-09-02 2007-04-02 0003-6951 https://pubs.kist.re.kr/handle/201004/134462 Electromagnetic noise suppressors on Cu transmission lines and oxidized Si substrate integrated with a SiO2 dielectric and a Co-Fe-Al-O magnetic layer are presented. Extremely large signal attenuation is achieved (-90 dB at 20 GHz) while the signal reflection is relatively small, being below -10 dB. These characteristics are attributed to the distributed capacitance (C) formed by the Cu and the oxidized Si substrate and the Cu/SiO2/Co-Fe-Al-O and the distributed inductance (L) due to the magnetic thin film. The main loss mechanism is the L-C resonance and this emphasizes the role of the magnetic thin film providing the inductance. (c) 2007 American Institute of Physics. English AMER INST PHYSICS Si-based electromagnetic noise suppressors integrated with a magnetic thin film Article 10.1063/1.2719681 1 APPLIED PHYSICS LETTERS, v.90, no.14 APPLIED PHYSICS LETTERS 90 14 scie scopus 000245512200117 2-s2.0-34047243832 Physics, Applied Physics Article High frequency Magnetic thin film Noise suppressor Si substrate CoFeAlO