Oh, Seung Jae Kang, Chul Maeng, Inhee Son, Joo-Hiuk Cho, Nam Ki Song, Jin Dong Choi, Won Jun Cho, Woon-Jo Lee, Jung Il 2024-01-21T01:05:56Z 2024-01-21T01:05:56Z 2021-09-04 2007-03-26 0003-6951 https://pubs.kist.re.kr/handle/201004/134519 The authors investigated the carrier dynamics of n-type modulation-doped InAs/GaAs quantum dots (QDs) using terahertz time-domain spectroscopy to estimate the total number of electrons captured by the QDs. The terahertz power absorption of the sample with QDs was less than that of the sample without QDs. This is attributed to the fact that the carriers are confined in the QDs. The experiment results were fitted into the Drude model and the number of electrons captured by QDs was determined through the difference in the numbers of free electrons of the samples with and without QDs. (c) 2007 American Institute of Physics. English AMER INST PHYSICS PULSES Measurement of carrier concentration captured by InAs/GaAs quantum dots using terahertz time-domain spectroscopy Article 10.1063/1.2716859 1 APPLIED PHYSICS LETTERS, v.90, no.13 APPLIED PHYSICS LETTERS 90 13 scie scopus 000245317100027 2-s2.0-34047167954 Physics, Applied Physics Article PULSES