Lee, S-W Kim, T. G. Hirakawa, K. Kim, J. S. Choi, S-H Cho, H. Y. 2024-01-21T01:06:21Z 2024-01-21T01:06:21Z 2021-09-05 2007-03-14 0957-4484 https://pubs.kist.re.kr/handle/201004/134536 We have investigated lateral conduction mid-infrared photodetectors using the photoionization of holes in the valence band of self-assembled Ge/Si quantum dots. A mid-infrared photocurrent signal was observed in the photon energy range of 140-400 meV resulting from an intersubband transition in the valence band of self-assembled Ge quantum dots and subsequent lateral transport of photoexcited carriers in the SiGe conduction channel. The peak responsivity was 134 mA W-1 at a photon energy of 240 meV at T = 10 K. Furthermore, the band structure of the Ge QD system was estimated using electrical and optical measurements. English IOP PUBLISHING LTD INFRARED PHOTOCONDUCTIVITY TRANSITIONS Lateral photoconductivity and bound states of self-assembled Ge/Si quantum dots Article 10.1088/0957-4484/18/10/105403 1 NANOTECHNOLOGY, v.18, no.10 NANOTECHNOLOGY 18 10 scie scopus 000245230100014 2-s2.0-33947494612 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article INFRARED PHOTOCONDUCTIVITY TRANSITIONS Photodetector photoionization quantum dots Ge/Si infrared