Kyung-Ho Shin Hoang Yen Thi Nguyen Hyunjung Yi 2024-01-21T01:30:32Z 2024-01-21T01:30:32Z 2021-09-06 2007-03 1226-1750 https://pubs.kist.re.kr/handle/201004/134563 Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed. 한국자기학회 Using Electron-beam Resists as Ion Milling Mask for Fabrication of Spin Transfer Devices Article 2 Journal of Magnetics, v.12, no.1, pp.12 - 16 Journal of Magnetics 12 1 12 16 kci ART001185522 spin transfer nano-scale junctions spin valves e-beam resist subtractive process spin transfer nano-scale junctions spin valves e-beam resist subtractive process