Jaecheon Sohn 한석희 Masahiro Yamaguchi 임상호 2024-01-21T01:30:45Z 2024-01-21T01:30:45Z 2021-09-06 2007-03 1226-1750 https://pubs.kist.re.kr/handle/201004/134572 Si-based electromagnetic noise suppressors on coplanar waveguide transmission lines incorporated with a SiO2dielectric layer and a nanogranular Co-Fe-Al-O magnetic thin film are reported. Unlike glass-based devices, large signal attenuation is observed even in the bare structure without coating the magnetic thin film. Much larger signal attenuation is achieved in fully integrated devices. The transmission scattering parameter (S21) is as small as -90 dB at 20 GHz at the following device dimensions; the thicknesses of the SiO2 and Co-Fe-Al-O thin films are 0.1 mm and 1 mm, respectively, the length of the transmission line is 15 mm, and the width of the magnetic thin film is 2000 mm. In all cases, the reflection scattering parameter (S11) is below -10 dB over the whole frequency band. Additional distributed capacitance formed by the Cu transmission line/SiO2/Si substrate is responsible for these characteristics. It is considered that the present noise suppressors based on the Si substrate are a first important step to the realization of MMIC noise suppressors. English 한국자기학회 Fully Integrated Electromagnetic Noise Suppressors Incorporated with a Magnetic Thin Film on an Oxidized Si Substrate Article 2 Journal of Magnetics, v.12, no.1, pp.21 - 26 Journal of Magnetics 12 1 21 26 kci ART001189683 electromagnetic noise suppressor integrated device Si substrate coplanar waveguide transmission line magnetic thin film