Kim, Han-Ki Kim, Myung Soo Park, Jeong-Woo Cho, Woon Jo 2024-01-21T01:31:06Z 2024-01-21T01:31:06Z 2021-09-05 2007-03 0013-4651 https://pubs.kist.re.kr/handle/201004/134587 The effect of hydrogen dilution on the microstructure of in situ polycrystalline Si (poly-Si) films grown by catalyzer-enhanced chemical vapor deposition (CECVD) has been investigated using transmission electron microscopy and transmission electron diffraction analysis. It was shown that the microstructure of the Si films grown at a low substrate temperature (< 80 degrees C) in a CECVD was strongly affected by the hydrogen dilution ratio (H-2/SiH4). In addition, a secondary ion mass spectroscopy depth profile of the in situ poly-Si film grown by CECVD at SiH4/H-2 (10/400 sccm ) exhibited much lower hydrogen concentration than dehydrogenated amorphous Si film grown by conventional plasma-enhanced chemical deposition. These results indicate that the CECVD technique is a promising candidate to grow high-quality in situ poly-Si films on glass or a flexible substrate for low-temperature poly-Si and flexible displays. (c) 2007 The Electrochemical Society. All rights reserved. English ELECTROCHEMICAL SOC INC SILICON THIN-FILMS AMORPHOUS-SILICON LOW-TEMPERATURE CRYSTALLIZATION DECOMPOSITION FILAMENT KINETICS PLASMA LAYER Transmission electron microscope study of in situ polycrystalline Si film grown by catalyzer-enhanced chemical vapor deposition Article 10.1149/1.2422871 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.3, pp.J73 - J76 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 3 J73 J76 scie scopus 000243977500082 2-s2.0-33847006636 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article SILICON THIN-FILMS AMORPHOUS-SILICON LOW-TEMPERATURE CRYSTALLIZATION DECOMPOSITION FILAMENT KINETICS PLASMA LAYER silicon cvd polycrystalline