Kim, Min-Young Oh, Tae-Sung Kim, Jin-Sang 2024-01-21T01:31:14Z 2024-01-21T01:31:14Z 2021-09-05 2007-03 0374-4884 https://pubs.kist.re.kr/handle/201004/134593 Bi2Te3 films were electrodeposited for nanowire applications and the effects of annealing in a H-2 atmosphere and an Ar ambient on the thermoelectric properties of the electrodeposited Bi2Te3 films were investigated. The Bi2Te3 films electrodeposited in solutions with Bi/(Bi+Te) mole ratios of 50% and 60% exhibited the strong (110) preferred orientation. The behaviors of the thermoelectric properties were almost identical for the annealing treatments in a H-2 atmosphere and in an Ar ambient. The power factor of the Bi2Te3 film without a (110) preferred orientation, as electrodeposited in a solution with a Bi content of 40%, was remarkably improved from 3.1 X 10(-4) W/K-2-m to 16.5 similar to 18.6 x 10(-4) W/K-2-m by annealing in a H-2 atmosphere and in an Ar ambient. However, no improvement of the power factor could be achieved by annealing the Bi2Te3 films with (110) preferred orientations. The interaction between the electrodeposited Bi2Te3 film and the Ti seed layer also affected the annealing behavior of the electrodeposited Bi2Te3 film. English KOREAN PHYSICAL SOC HOT-PRESSING METHOD ALLOYS REDUCTION ARRAYS FILMS Annealing behavior of Bi2Te3 thermoelectric semiconductor electrodeposited for nanowire applications Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.3, pp.670 - 676 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 50 3 670 676 scie scopus kci 000244988500027 2-s2.0-34147178105 Physics, Multidisciplinary Physics Article; Proceedings Paper HOT-PRESSING METHOD ALLOYS REDUCTION ARRAYS FILMS thermoelectrics bismuth telluride thin film nanowire electrodeposition annealing