Lee, Seung-Cheol Lee, Kwang-Ryeol Lee, Kyu-Hwan 2024-01-21T01:31:21Z 2024-01-21T01:31:21Z 2021-09-05 2007-03 0304-8853 https://pubs.kist.re.kr/handle/201004/134598 For a practical viewpoint, presence of spin splitting of valence band in host semiconductors by the doping of transition metal (TM) ions is an essential property when designing a diluted magnetic semiconductors (DMS) material. The. rst principle calculations were performed on the electronic and magnetic structure of 3d transition metal doped GaN. V, Cr, and Mn doped GaNs could not be candidates for DMS materials since most of their magnetic moments is concentrated on the TM ions and the splittings of valence band were negligible. In the cases of Fe, Co, Ni, and Cu doped GaNs, on the contrary, long-ranged spin splitting of valence band was found, which could be candidates for DMS materials. (C) 2006 Elsevier B.V. All rights reserved. English ELSEVIER MAGNETIC SEMICONDUCTORS ACCURATE ENERGY Electronic structures and valence band splittings of transition metals doped GaNs Article 10.1016/j.jmmm.2006.11.037 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.310, no.2, pp.E732 - E734 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 310 2 E732 E734 scie scopus 000247720400373 2-s2.0-33847657553 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article MAGNETIC SEMICONDUCTORS ACCURATE ENERGY diluted magnetic semiconductor GaN transition metals valence band splitting first principle calculations