Jung, S. I. Yeo, H. Y. Yun, I. Han, I. K. Cho, S. M. Lee, J. I. 2024-01-21T01:31:22Z 2024-01-21T01:31:22Z 2021-09-05 2007-03 0374-4884 https://pubs.kist.re.kr/handle/201004/134599 . Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of similar to 100 mn. We show that these data have direct implications for device performance associated with the injection current. English KOREAN PHYSICAL SOC SUPERLUMINESCENT DIODES GAIN Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy Article 10.3938/jkps.50.763 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.3, pp.763 - 766 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 50 3 763 766 scie scopus kci ART001055031 000244988500045 2-s2.0-34147169381 Physics, Multidisciplinary Physics Article; Proceedings Paper SUPERLUMINESCENT DIODES GAIN quantum dot laser diode near-field scanning optical microscopy electroluminescence