Byeun, Y.-K. Choi, D.-M. Han, K.-S. Choi, S.-C. 2024-01-21T01:31:52Z 2024-01-21T01:31:52Z 2021-09-02 2007-03 1229-7801 https://pubs.kist.re.kr/handle/201004/134620 High-quality one-dimensional GaN nanorods and nanowires were synthesized on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffraction, scanning and transmission electron microscopy, and photoluminescence techniques. Full substrate coverage of densely packed, uniform, straight and aligned one-dimensional GaN nanowires with a diameter of 80nm were grown at 700-900°C. The X-ray diffraction patterns, transmission electron microscopic image, and selective area electron diffraction patterns indicate that the one-dimensional GaN nanostructures are a pure single crystalline and preferentially oriented in the [001] direction. We observed high optical quality of GaN nanowires by photoluminescence analysis. English Korean Ceramic Society Synthesis and characterization of one-dimensional GaN nanostructures prepared via halide vapor-phase epitaxy Article 10.4191/KCERS.2007.44.3.142 1 Journal of the Korean Ceramic Society, v.44, no.3, pp.142 - 146 Journal of the Korean Ceramic Society 44 3 142 146 scopus kci ART001050077 2-s2.0-34247464722 Article GaN Nanostructure One-dimensional Photoluminescence Single crystalline