Kim, Yong Tae Kim, Seong-Il 2024-01-21T01:31:58Z 2024-01-21T01:31:58Z 2021-08-31 2007-03 1862-6254 https://pubs.kist.re.kr/handle/201004/134624 Electromigration (EM) failure in Al interconnects is significantly improved by inserting a WN film between Al and the interlayer dielectric: over 90% of test samples failed with the Al/TiN/Ti interconnects, whereas the failure rate of the Al film on WN is reduced to less than 13% under the stress conditions of 9 MA/cm(2) and 225 degrees C, and the EM lifetime is also much extended at the same conditions. Experimental results suggest that higher activation energy, no hillocks and compressive stress are responsible for the improved electromigration performance in the Al/WN interconnect. English WILEY-V C H VERLAG GMBH BARRIER LAYER FILMS Improved electromigration failure in Al based interconnects Article 10.1002/pssr.200600019 1 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.1, no.2, pp.R47 - R49 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 2 R47 R49 scie scopus 000244882400005 2-s2.0-38749149890 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article BARRIER LAYER FILMS Interconnect electromigration