Yi, Hyunjung Koo, Hyun Cheol Kim, Hi Jung 2024-01-21T01:32:07Z 2024-01-21T01:32:07Z 2021-08-31 2007-03 0304-8853 https://pubs.kist.re.kr/handle/201004/134629 In this study, we adopted a current line to produce a localized amperian. field and demonstrate the resistance modulation of an InAs two- dimensional electron gas channel with the amperian. field. The wafer structure is InAlAs( 6 nm)/ InGaAs( 2.5 nm)/ InAsSQW( 2 nm)/ InGaAs( 13.5 nm)/ InAlAs( 20 nm). A 90- nm- thick and 3.2- mm- wide gold line, perpendicular to the mesa pattern, was adopted as a source of amperian. field. Resistance changes of the mesa wherein the amperian gold line is positioned were measured with a sensing current of 20 mu A. We obtained 10% of resistance change ( R( I-Au = 10 mA) - R( I-Au = 0))/ R( I-Au = 0) with the current density, J(Au) 3.47 x 10(6) A/ cm 2, which is comparable with that of the MRAM digit line. The resistance change increases with the amperian current. This result seems to be related to weak localization in the InAs 2DEG system and shows the feasibility of an amperian device to control the resistance of the InAs 2DEG system. (c) 2006 Elsevier B. V. All rights reserved. English ELSEVIER Resistance modulation using amperian field in a two-dimensional electron gas system Article 10.1016/j.jmmm.2006.10.850 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.310, no.2, pp.1952 - 1954 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 310 2 1952 1954 scie scopus 000247720400024 2-s2.0-33847644479 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article InAs two-dimensional electron gas amperian field spin FET weak localization