Kale, S. S. Mane, R. S. Pathan, H. M. Shaikh, A. V. Joo, Oh-Shim Han, Sung-Hwan 2024-01-21T01:32:08Z 2024-01-21T01:32:08Z 2021-09-05 2007-02-28 0169-4332 https://pubs.kist.re.kr/handle/201004/134630 Nanocrystalline zinc telluride (ZnTe) thin films were prepared by using successive ionic layer adsorption and reaction (SILAR) method from aqueous solutions of zinc sulfate and sodium telluride. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The synthesized ZnTe thin films were nanocrystalline with densely aggregated particles in nanometer scale and were free from the voids or cracks. The optical band gap energy of the film was found to be thickness dependent. The elemental chemical compositional stoichiometric analysis revealed good Zn:Te elemental ratio of 53:47. (c) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV Preparation and characterization of ZnTe thin films by SILAR method Article 10.1016/j.apsusc.2006.09.043 1 APPLIED SURFACE SCIENCE, v.253, no.9, pp.4335 - 4337 APPLIED SURFACE SCIENCE 253 9 4335 4337 scie scopus 000244802300036 2-s2.0-33846786999 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article ZnTe thin films solution chemistry XRD SEM optical studies