Lee, Dong Uk Lee, Min Seung Kim, Jae-Hoon Kim, Eun Kyu Koo, Hyun-Mo Cho, Won-Ju Kim, Won Mok 2024-01-21T01:32:15Z 2024-01-21T01:32:15Z 2021-09-04 2007-02-26 0003-6951 https://pubs.kist.re.kr/handle/201004/134635 Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators were fabricated. The tunneling SiO1.3N insulator, Au nanoparticles, and control SiO1.3N insulator were sequentially deposited by digital sputtering method at 300 degrees C. The size of Au nanoparticles was controlled in the range of 1-5 nm by adjusting the deposition thickness of Au layer and the density of Au nanoparticles was approximately 1.5x10(12) cm(-2). A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of Au particles and the memory window was larger than 2.5 V. (c) 2007 American Institute of Physics. English AMER INST PHYSICS OXIDE-SEMICONDUCTOR STRUCTURES NANOCRYSTALS FABRICATION Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators by digital sputtering method Article 10.1063/1.2711772 1 APPLIED PHYSICS LETTERS, v.90, no.9 APPLIED PHYSICS LETTERS 90 9 scie scopus 000244591700113 2-s2.0-33847661428 Physics, Applied Physics Article OXIDE-SEMICONDUCTOR STRUCTURES NANOCRYSTALS FABRICATION nanoparticle floating gate nonvolatile memory