Lee, D. B. Park, S. W. 2024-01-21T01:33:21Z 2024-01-21T01:33:21Z 2021-09-05 2007-02 0030-770X https://pubs.kist.re.kr/handle/201004/134681 Ti3SiC2 materials were synthesized by hot pressing using a new starting-material system consisting of a TiCx(x=0.6)/Si powder mixture. The oxidation of Ti3SiC2 at temperatures between 900 and 1200 degrees C in air for up to 100 h resulted in the formation of an outer TiO2 layer, an intermediate SiO2-rich layer and an inner (TiO2 + SiO2) mixed layer. During oxidation, Ti diffused outwards to form the outer TiO2 layer, and oxygen transported inwards to form the inner (TiO2 + SiO2) mixed layer. At the same time, the carbon in Ti3SiC2 escaped into the air. Below the scale, there was a narrow oxygen-affected zone, The oxidation at the scale-matrix interface proceeded by the disintegration of the lamellar Ti3SiC2 grains to form crystallites with a size of a few tens of nanometers containing oxygen. The detailed scale characteristics and oxidation mechanism are described. English SPRINGER/PLENUM PUBLISHERS HIGH-TEMPERATURE OXIDATION MECHANICAL-PROPERTIES BEHAVIOR ALLOYS COMPOSITE RESISTANCE OXIDES Oxidation of Ti3SiC2 between 900 and 1200 degrees C in air Article 10.1007/s11085-006-9043-9 1 OXIDATION OF METALS, v.67, no.1-2, pp.51 - 66 OXIDATION OF METALS 67 1-2 51 66 scie scopus 000243823700003 2-s2.0-33846693349 Metallurgy & Metallurgical Engineering Metallurgy & Metallurgical Engineering Article HIGH-TEMPERATURE OXIDATION MECHANICAL-PROPERTIES BEHAVIOR ALLOYS COMPOSITE RESISTANCE OXIDES titanium silicon carbon oxidation