Kang, Gil Bum Kim, Seong-Il Kim, Young Hwan Park, Min-Chul Kim, Yong Tae Lee, Chang Woo 2024-01-21T01:33:27Z 2024-01-21T01:33:27Z 2021-09-05 2007-02 0021-4922 https://pubs.kist.re.kr/handle/201004/134685 Dense and uniformly distributed arrays of holes and nanodots were fabricated in silicon oxide and silicon. The holes were approximately 25 nm wide, 40 nm deep, and 60 nm apart. To obtain nano size patterns, self-assembling resists were used to produce a layer of uniformly distributed parallel cylinders of poly(methyl methacrylate) (PMMA) in a polystyrene (PS) matrix. The PMMA cylinders were degraded and removed by acetic acid rinsing to produce a PS mask for pattern transfer. The silicon oxide was removed by fluorine-based reactive ion etching (RIE). Selectively deposited tungsten nanodots were formed inside nano sized trenches by low pressure chemical vapor deposition (LPCVD). The tungsten nanodots and silicon trenches were 26 and 30 nm, respectively. English JAPAN SOC APPLIED PHYSICS SELF-ASSEMBLED MONOLAYERS FILMS ROUTE Tungsten nanodot arrays patterned using diblock copolymer templates Article 10.1143/JJAP.46.856 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, no.2, pp.856 - 858 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 2 856 858 scie scopus 000246059000084 2-s2.0-34547894305 Physics, Applied Physics Article SELF-ASSEMBLED MONOLAYERS FILMS ROUTE Copolymer lithography Diblock copolymer Nanodot Nanotemplate Reactive ion etching