Lee, Joo-Won Ju, Byeong-Kwon Jang, Jin Yoon, Young-Soo Kim, Jai-Kyeong 2024-01-21T01:33:34Z 2024-01-21T01:33:34Z 2021-09-05 2007-02 0022-2461 https://pubs.kist.re.kr/handle/201004/134690 Pentacene thin film transistors fabricated without photolithographic patterning were fabricated on the plastic substrates. Both the organic/inorganic thin films and metallic electrode were patterned by shifting the position of the shadow-mask which accompanies the substrate throughout the deposition process. By using an optically transparent zirconium oxide (ZrO2) as a gate insulator and octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayer (SAM) to increase the adhesion between the plastic substrate and gate insulator and the mobility with surface treatment, high-performance transistor with field effect mobility 0.66 cm(2)/V s and I-on/I-off > 10(5) was formed on the plastic substrate. This technique will be applicable to all structure deposited at low temperature and suitable for an easy process for flexible display. English SPRINGER DEPOSITION STABILITY High mobility organic transistor patterned by the shadow-mask with all structure on a plastic substrate Article 10.1007/s10853-006-1046-z 1 JOURNAL OF MATERIALS SCIENCE, v.42, no.3, pp.1026 - 1030 JOURNAL OF MATERIALS SCIENCE 42 3 1026 1030 scie scopus 000244198600041 2-s2.0-33847215116 Materials Science, Multidisciplinary Materials Science Article DEPOSITION STABILITY mobility organic transistor shadow mask plastic substrate