Kim, K. S. Shin, K. H. Lim, S. H. 2024-01-21T01:33:41Z 2024-01-21T01:33:41Z 2021-09-05 2007-02 0304-8853 https://pubs.kist.re.kr/handle/201004/134695 One of the features of the new spin-flop switching method with its wide writing window is to use a trilayer synthetic antiferromagnet (SyAF) with circular geometry as the free layer structure. For circular cells with zero in-plane shape anisotropy, the bi-stability of bits is achieved through the formation of induced anisotropy. Both the bi-stability and spin alignment become poor at a small induced anisotropy. On the other hand, a large induced anisotropy has an adverse effect of increasing the switching field. The switching field increase is more pronounced at higher antiferromagnetic exchange coupling of the trilayer SyAF. Our systematic investigations show that the suitable magnitude of induced anisotropy field is in the range 15-20 Oe. (c) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV ROOM-TEMPERATURE MAGNETORESISTANCE Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory Article 10.1016/j.jmmm.2006.07.014 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.309, no.2, pp.326 - 332 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 309 2 326 332 scie scopus 000242512000026 2-s2.0-33750532734 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article ROOM-TEMPERATURE MAGNETORESISTANCE magnetic random access memory induced anisotropy bit stability switching field spin-flop switching