Choi, Ki Yong Yoon, Dae Sung Kim, The Song Choi, Duck Kyun 2024-01-21T01:33:42Z 2024-01-21T01:33:42Z 2021-09-05 2007-02 1058-4587 https://pubs.kist.re.kr/handle/201004/134696 We have used silicon carbide (SiC) thin films as an insulating material of the PZT micro cantilevers for electrical and biological passivation. The use of SiC thin films as a passivation layer of the PZT microcantilevers is also seemingly viable to insure the high mass sensitivity as well as the stable passivation. In this study, we report the effect of SiC passivation layer on the performance of the PZT microcantilevers. The micromachined PZT microcantilevers having a structure of SiNx/Ta/Pt/PZT/Pt were fabricated through MEMS processes. In order to improve the mass sensitivity and the passivation, SiC thin films of the high elasticity material were deposited on the cantilever using plasma enhanced chemical vapor deposition (PECVD) at the temperature of 400 degrees C. Plane-strain modulus of SiC thin film was measured by nanoindentation. We observed that SiC thin films showed higher Young's modulus than Si and SiO2. Before and after the deposition of SiC thin films, the end-tip deflection and the resonant frequency change of microcantilevers were measured by a confocal microscope and an impedance analyzer. It was confirmed that end-tip deflection of microcantilever was reduced by 13-18% through the deposition of SiC thin films, indicating the stress relaxation of the microcantilevers. English TAYLOR & FRANCIS LTD MEMS STRESS Effect of silicon carbide passivation film on the resonance characteristics of cantilever Article 10.1080/10584580601099009 1 INTEGRATED FERROELECTRICS, v.88, pp.76 - + INTEGRATED FERROELECTRICS 88 76 + scie scopus 000246302900011 2-s2.0-71149103527 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article; Proceedings Paper MEMS STRESS microcantilever biosensor PZT silicon carbide thin film