Lee, J. W. Angadi, Basavaraj Park, H. C. Park, D. H. Choi, J. W. Choi, W. K. Kim, T. W. 2024-01-21T01:34:13Z 2024-01-21T01:34:13Z 2021-08-31 2007-02 0013-4651 https://pubs.kist.re.kr/handle/201004/134717 We present the results of Ti/Ni/Ti/Au multilayer ohmic contacts on n-type 6H-SiC and their interface analysis. The as-deposited contacts show rectifying behavior and, with the increase in annealing temperature, they gradually transform to high-quality ohmic contacts exhibiting linear current-voltage characteristics. The interface evolution was analyzed through glancing angle X-ray diffraction, Auger electron spectroscopy, and atomic force microscopy. The TiSi2 and Ni2Si formed at the interfaces during the low-temperature annealing initiate the conversion from Schottky to ohmic behavior, while the increased Ni2Si formation at high-temperature annealing makes the perfect ohmic contacts. The results were interpreted through the thermodynamic reaction mechanisms. (c) 2007 The Electrochemical Society. English ELECTROCHEMICAL SOC INC SILICON-CARBIDE NICKEL NITRIDE Formation and interface analysis of Ti/Ni/Ti/Au ohmic contacts on n-type 6H-SiC Article 10.1149/1.2761526 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.10, pp.H849 - H852 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 10 H849 H852 scie scopus 000248984700061 2-s2.0-34548201853 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article SILICON-CARBIDE NICKEL NITRIDE Schottky contact Ohmic contact thermal annealing SiC