Kim, J. H. Park, Y. J. Park, Y. M. Song, J. D. Lee, J. I. Kim, T. W. 2024-01-21T01:34:19Z 2024-01-21T01:34:19Z 2021-09-04 2007-01-30 0169-4332 https://pubs.kist.re.kr/handle/201004/134721 The electrical and the optical properties of InAs/GaAs quantum dots (QDs) grown by using atomic layer epitaxy (ALE) technique were investigated by using capacitance-voltage (C-V) and photoluminescence (PL) measurements. C-V curves showed that the plateaus related to the zero-dimensional carrier confinement effect existed and that the number of electrons occupying the InAs QD was approximately 7. The full width at half maxima of the interband transitions from the ground electronic subband to the ground heavy-hole subband and from the first excited electronic state to the first excited state heavy-hole subband were not significantly affected by the temperature variation, indicative of strong confinement of the carriers occupying the InAs QDs. These results can help improve understanding for applications of InAs/GaAs QDs grown by using ALE in high-efficiency electronic and optoelectronic devices. (c) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV TEMPERATURE HETEROSTRUCTURES CAPACITANCE ISLANDS PROFILE LASERS Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy Article 10.1016/j.apsusc.2006.07.051 1 APPLIED SURFACE SCIENCE, v.253, no.7, pp.3503 - 3507 APPLIED SURFACE SCIENCE 253 7 3503 3507 scie scopus 000244381700025 2-s2.0-33846335541 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article TEMPERATURE HETEROSTRUCTURES CAPACITANCE ISLANDS PROFILE LASERS epitaxy self-assembly semiconductor electrical properties optical properties