Kim, Tae Whan Shin, Jae Won Lee, Jeong Yong Jung, Jae Hun Lee, Jung Wook Choi, Won Kook Jin, Sungho 2024-01-21T01:34:21Z 2024-01-21T01:34:21Z 2021-09-05 2007-01-29 0003-6951 https://pubs.kist.re.kr/handle/201004/134722 Electron-beam-induced Zn nanocrystal islands were formed in a dielectric SiO2 layer. When a ZnO thin film on a p-type Si with amorphous SiOx interface layer is subjected to a 900 degrees C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn2xSi1-xO2 layer is formed. Upon irradiation with a 300 keV electrons, metallic and single crystal nanoislands of Zn with similar to 7-10 nm diameter were formed and embedded within the SiO2 interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented. English AMER INST PHYSICS QUANTUM-DOT SILICON NANOCRYSTALS ROOM-TEMPERATURE COULOMB-BLOCKADE FABRICATION TRANSISTORS MICROSCOPE SYSTEM MEMORY FIELD Electron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer Article 10.1063/1.2450650 1 APPLIED PHYSICS LETTERS, v.90, no.5 APPLIED PHYSICS LETTERS 90 5 scie scopus 000243977300035 2-s2.0-33846981859 Physics, Applied Physics Article QUANTUM-DOT SILICON NANOCRYSTALS ROOM-TEMPERATURE COULOMB-BLOCKADE FABRICATION TRANSISTORS MICROSCOPE SYSTEM MEMORY FIELD Zn nanocrystal electron beam SiO2