Jung, Kyooho Seo, Hongwoo Kim, Yongmin Im, Hyunsik Hong, JinPyo Park, Jae-Wan Lee, Jeon-Kook 2024-01-21T01:34:22Z 2024-01-21T01:34:22Z 2021-09-05 2007-01-29 0003-6951 https://pubs.kist.re.kr/handle/201004/134723 The resistance switching current-voltage (I-V) characteristics in polycrystalline NiO films were investigated in the temperature range of 10 K < T < 300 K. Very clear reversible resistive switching phenomena were observed in the entire temperature range. An analysis of the temperature dependence of the resistance switching transport revealed additional features, not reported in previous studies, that weak metallic conduction and correlated barrier polaron hopping coexist in the high-resistance off state and that relative dominance depends on the temperature and defect configuration. In addition, the authors propose that metallic Ni defects, existing near polycrystalline (or granular) boundaries, play a key role in the formation of a metallic channel. English AMER INST PHYSICS THIN OXIDE-FILMS NEGATIVE RESISTANCE Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films Article 10.1063/1.2437668 1 APPLIED PHYSICS LETTERS, v.90, no.5 APPLIED PHYSICS LETTERS 90 5 scie scopus 000243977300043 2-s2.0-33846984225 Physics, Applied Physics Article THIN OXIDE-FILMS NEGATIVE RESISTANCE NiO resisitve switching temperature dependency bistabel state non volatile memory