Koo, Hyun Cheol Yi, Hyunjung Ko, Jae-Beom Chang, Joonyeon Han, Suk-Hee Jung, Donghwa Huh, Seon-Gu Eom, Jonghwa 2024-01-21T01:34:49Z 2024-01-21T01:34:49Z 2021-09-05 2007-01-08 0003-6951 https://pubs.kist.re.kr/handle/201004/134742 The authors demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin-polarized current is injected from a Ni81Fe19 thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multilayers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring Ni81Fe19 electrode. The observed spin diffusion length is 1.8 mu m at 20 K. The injected spin polarization across the Ni81Fe19/InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Their experimental results will contribute significantly to the realization of a practical spin field effect transistor. English AMER INST PHYSICS Electrical spin injection and detection in an InAs quantum well Article 10.1063/1.2430688 1 APPLIED PHYSICS LETTERS, v.90, no.2 APPLIED PHYSICS LETTERS 90 2 scie scopus 000243582000036 2-s2.0-33846243784 Physics, Applied Physics Article electrical spin injection InAs quantum well spin FET