Hong, Jinki Joo, Sungjung Kim, Tae-Suk Rhie, Kungwon Kim, K. H. Kim, S. U. Lee, B. C. Shin, Kyung-Ho 2024-01-21T01:34:51Z 2024-01-21T01:34:51Z 2021-09-05 2007-01-08 0003-6951 https://pubs.kist.re.kr/handle/201004/134743 The authors have investigated the magnetoresistance of ferromagnet- semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, they confirmed that their data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications. (c) 2007 American Institute of Physics. English AMER INST PHYSICS MAGNETIC BARRIERS BALLISTIC REGIME TRANSPORT MAGNETORESISTANCE ELECTRONS Local Hall effect in hybrid ferromagnetic/semiconductor devices Article 10.1063/1.2416000 1 APPLIED PHYSICS LETTERS, v.90, no.2 APPLIED PHYSICS LETTERS 90 2 scie scopus 000243582000088 2-s2.0-33846189314 Physics, Applied Physics Article MAGNETIC BARRIERS BALLISTIC REGIME TRANSPORT MAGNETORESISTANCE ELECTRONS