Kwon, Min-Ho Lee, Bong-Sub Bogle, Stephanie N. Nittala, Lakshmi N. Bishop, Stephen G. Abelson, John R. Raoux, Simone Cheong, Byung-ki Kim, Ki-Bum 2024-01-21T01:34:52Z 2024-01-21T01:34:52Z 2021-09-05 2007-01-08 0003-6951 https://pubs.kist.re.kr/handle/201004/134744 The phase change material Ge2Sb2Te5 is widely investigated for use in nonvolatile memories. It has been reported that the crystallization speed depends on the thermal history, indicating that structural differences exist between amorphous states. The authors apply fluctuation electron microscopy to quantify differences in the nanometer-scale structural order between several amorphous states of Ge2Sb2Te5. All as-deposited films are found to contain ordered regions. Thermal annealing below the crystallization threshold increases the nanoscale order, and such samples crystallize slightly more rapidly. The authors hypothesize that the nanoscale ordered regions act as the nuclei for crystallization, with the largest regions being the most significant. English AMER INST PHYSICS MEDIUM-RANGE ORDER LASER-INDUCED CRYSTALLIZATION PHASE-CHANGE MATERIALS TE THIN-FILM DISORDERED MATERIALS SILICON GROWTH Nanometer-scale order in amorphous Ge2Sb2Te5 analyzed by fluctuation electron microscopy Article 10.1063/1.2430067 1 APPLIED PHYSICS LETTERS, v.90, no.2 APPLIED PHYSICS LETTERS 90 2 scie scopus 000243582000035 2-s2.0-33846233834 Physics, Applied Physics Article MEDIUM-RANGE ORDER LASER-INDUCED CRYSTALLIZATION PHASE-CHANGE MATERIALS TE THIN-FILM DISORDERED MATERIALS SILICON GROWTH Phase Change Memory material Ge2Sb2Te5 Nanometer-scale order fluctuation electron microscopy