Santos, T. S. Lee, J. S. Migdal, P. Lekshmi, I. C. Satpati, B. Moodera, J. S. 2024-01-21T01:34:56Z 2024-01-21T01:34:56Z 2021-09-04 2007-01-05 0031-9007 https://pubs.kist.re.kr/handle/201004/134747 Electron spin-polarized tunneling is observed through an ultrathin layer of the molecular organic semiconductor tris(8-hydroxyquinolinato)aluminum (Alq(3)). Significant tunnel magnetoresistance (TMR) was measured in a Co/Al2O3/Alq(3)/NiFe magnetic tunnel junction at room temperature, which increased when cooled to low temperatures. Tunneling characteristics, such as the current-voltage behavior and temperature and bias dependence of the TMR, show the good quality of the organic tunnel barrier. Spin polarization (P) of the tunnel current through the Alq(3) layer, directly measured using superconducting Al as the spin detector, shows that minimizing formation of an interfacial dipole layer between the metal electrode and organic barrier significantly improves spin transport. English AMERICAN PHYSICAL SOC ENERGY-LEVEL ALIGNMENT LIGHT-EMITTING-DIODES GIANT MAGNETORESISTANCE ELECTRONIC-STRUCTURE JUNCTIONS INTERFACES CONDUCTANCE ALUMINUM FILMS SPECTROSCOPY Room-temperature tunnel magnetoresistance and spin-polarized tunneling through an organic semiconductor barrier Article 10.1103/PhysRevLett.98.016601 1 PHYSICAL REVIEW LETTERS, v.98, no.1 PHYSICAL REVIEW LETTERS 98 1 scie scopus 000243379700039 2-s2.0-33846368818 Physics, Multidisciplinary Physics Article ENERGY-LEVEL ALIGNMENT LIGHT-EMITTING-DIODES GIANT MAGNETORESISTANCE ELECTRONIC-STRUCTURE JUNCTIONS INTERFACES CONDUCTANCE ALUMINUM FILMS SPECTROSCOPY tunneling magnetoresistance Alq3 organic semiconductor