Kim, J. M. Park, C. Y. Lee, Y. T. Song, J. D. 2024-01-21T01:36:32Z 2024-01-21T01:36:32Z 2022-01-11 2006-12-15 0022-0248 https://pubs.kist.re.kr/handle/201004/134813 Highly tensile-strained (TS) InGaAs/lattice-matched (LM) InGaAlAs MQWs for 1.3 mu m emission wavelength were grown by MBE and their properties were characterized by photolurninescence (PL) measurements and cross-sectional transmission electron microscopy (TEM). The energy band of the TS-InGaAs/LM-InGaAlAs MQW was theoretically calculated using a 6 x 6 Luttinger-Kohn Hamiltonian. The tensile strains for the wells were varied from 1.0% to 1.5%, while lattice match was used for barriers. The wells and barriers have well-defined interfaces for TS-InGaAs/LM-InGaAlAs MQWs with a tensile strain (epsilon) of 1.0% and 1.25%, respectively. However, significant non-planarity between wells and barriers was observed for TS-InGaAs/LM-InGaAlAs MQWs with a tensile strain of 1.5%. For epsilon = 1.0%, 1.25%, and 1.5%, two peaks were observed in each PL spectrum. The longer wavelength peak is attributed to an electron-light hole (E1-LH1) transition while the shorter wavelength peak to an electron-heavy hole (E1-HH1) transition. While the E1-HH1 transition is dominant at epsilon = 1.0%, the E1-LH1 transition is dominant at - = 1.25% and 1.5%. The E1-LH1 transition was clearly observed with increasing well number. The total PL intensity increased as the well number increased from 1 to 4 QWs. However, the total PL intensity decreased with 5 QWs. Therefore, the maximum well number is limited to 4, constituting a compromise between well number and strain relaxation. (c) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV LASERS MBE growth and optical properties of highly tensile-strained In1-xGaxAs/In-0.52(Ga0.4Al0.6)(0.48)As multi-quantum-wells using digital alloy Article 10.1016/j.jcrysgro.2006.09.024 1 JOURNAL OF CRYSTAL GROWTH, v.297, no.1, pp.52 - 56 JOURNAL OF CRYSTAL GROWTH 297 1 52 56 scie scopus 000243252500010 2-s2.0-37849186140 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article LASERS molecular beam epitaxy quantum wells semiconducting III-V materials