Kim, D. S. Kim, Y. H. Lee, C. E. Kim, Y. T. 2024-01-21T02:00:23Z 2024-01-21T02:00:23Z 2021-09-05 2006-12-05 0040-6090 https://pubs.kist.re.kr/handle/201004/134826 Pr0.7Ca0.3MnO3 (PCMO) thin films were prepared on glass substrates by pulsed laser deposition and their resistive switching characteristics were investigated on a structure comprised of Ag/PCMO/Ag/glass. The PCMO films were grown with a (112) preferred orientation on Ag/glass substrates due to crystalline Ag layer. The crystalline PCMO films exhibited resistive switching characteristics by polarity change of bias voltage. The resistance ratio of high resistance state and low resistance state was enhanced by improvement of crystallinity of the PCMO film. The maximum resistance ratio obtained in this work was similar to 4.2. Finally, the resistive switching of the PCMO films observed in this work is expected to make it possible to integrate the non-volatile memory devices on glass substrates. (c) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA INTERFACE Resistive switching characteristics of Pr0.7Ca0.3MnO3 thin films grown on glass substrates by pulsed laser deposition Article 10.1016/j.tsf.2006.08.011 1 THIN SOLID FILMS, v.515, no.4, pp.2573 - 2576 THIN SOLID FILMS 515 4 2573 2576 scie scopus 000242931900219 2-s2.0-33750823277 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article INTERFACE Pr0.7Ca0.3MnO3 thin film glass substrate pulsed laser deposition resistive switching