Ku, D. Y. Kim, I. H. Lee, I. Lee, K. S. Lee, T. S. Jeon, J. -h. Cheong, B. Baik, Y. -J. Kim, W. M. 2024-01-21T02:00:25Z 2024-01-21T02:00:25Z 2021-09-05 2006-12-05 0040-6090 https://pubs.kist.re.kr/handle/201004/134827 In this study, indium-zinc oxide (IZO) thin films have been prepared at a room temperature, 200 and 300 degrees C by radio frequency magnetron sputtering from a In2O3-12 wt.% ZnO sintered ceramic target, and their dependence of electrical and structural properties on the oxygen content in sputter gas, the substrate temperature and the post-heat treatment was investigated. X-ray diffraction measurements showed that amorphous IZO films were formed at room temperature (RT) regardless of oxygen content in sputter gas, and micro-crystalline and In2O3-oriented crystalline films were obtained at 200 and 300 degrees C, respectively. From the analysis on the electrical and the structural properties of annealed IZO films under Ar atmosphere at 200, 300, 400 and 500 degrees C, it was shown that oxygen content in sputter gas is a critical parameter that determines the local structure of amorphous IZO film, stability of amorphous phase as well as its eventual crystalline structure, which again decide the electrical properties of the IZO films. As-prepared amorphous IZO film deposited at RT gave specific resistivity as low as 4.48 x 10(-4) Omega cm, and the highest mobility value amounting to 47 cm(2)/V s was obtained from amorphous IZO film which was deposited in 0.5% oxygen content in sputter gas and subsequently annealed at 400 degrees C in Ar atmosphere. (c) 2006 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA TRANSPARENT CONDUCTING OXIDES LOW SUBSTRATE-TEMPERATURE PULSED-LASER DEPOSITION PHYSICAL-PROPERTIES RESISTIVITY IN2O3 ZNO ITO IRRADIATION TRANSISTORS Structural and electrical properties of sputtered indium-zinc oxide thin films Article 10.1016/j.tsf.2006.03.040 1 THIN SOLID FILMS, v.515, no.4, pp.1364 - 1369 THIN SOLID FILMS 515 4 1364 1369 scie scopus 000242931900020 2-s2.0-33750839589 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article TRANSPARENT CONDUCTING OXIDES LOW SUBSTRATE-TEMPERATURE PULSED-LASER DEPOSITION PHYSICAL-PROPERTIES RESISTIVITY IN2O3 ZNO ITO IRRADIATION TRANSISTORS transparent conducting oxide amorphous electrical properties and measurements structural properties X-ray diffraction indium oxide zinc oxide