Kim, Hyun-Suk Kim, Il-Doo Kim, Ki-Byoung Yun, Tae-Soon Lee, Jong-Chul Tuller, Harry L. Choi, Won-Youl Kim, Ho-Gi 2024-01-21T02:02:05Z 2024-01-21T02:02:05Z 2021-09-01 2006-12 1385-3449 https://pubs.kist.re.kr/handle/201004/134897 We report on high tunablity of Ba0.6Sr0.4TiO3 (BST) thin films realized through the use of atomic layer deposited TiO2 films as a microwave buffer layer between BST and a high resistivity (HR) Si substrate. Coplanar waveguide (CPW) meander-line phase shifters using BST/TiO2/HR-Si and BST/MgO structures exhibited a differential phase shift of 95 degrees and 24.4 degrees, respectively, at 15 GHz under an electric field of 10 kV/cm. The figure of merit of the phase shifters at 15 GHz was 30.6 degrees/dB for BST film grown on a TiO2/HR-Si substrate and 12.2 degrees/dB for BST film grown on a MgO single crystal substrate. These results constitute significant progress in integrating BST films with conventional silicon technology. English SPRINGER THIN-FILMS TA2O5 Low frequency and microwave performances of Ba0.6Sr0.4TiO3 films on atomic layer deposited TiO2/high resistivity Si substrates Article 10.1007/s10832-006-9336-z 1 JOURNAL OF ELECTROCERAMICS, v.17, no.2-4, pp.421 - 425 JOURNAL OF ELECTROCERAMICS 17 2-4 421 425 scie scopus 000243610600057 2-s2.0-33847177692 Materials Science, Ceramics Materials Science Article; Proceedings Paper THIN-FILMS TA2O5 BST buffer layer coplanar waveguide phase shifter