Byeun, Yun-Ki Han, Kyong-Sop Choi, Sung-Churl 2024-01-21T02:02:29Z 2024-01-21T02:02:29Z 2021-09-01 2006-12 1385-3449 https://pubs.kist.re.kr/handle/201004/134914 High-quality one-dimensional GaN rods and nanowires were grown on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffractometery, scanning and transmission electron microscopy, and photoluminescence techniques. A high density of straight and aligned one-dimensional GaN nanowires with a diameter of 80 nm was uniformly formed on the entire substrate at 700 degrees C. The X-ray diffraction patterns, transmission electron microscopic images, and selective area electron diffraction patterns indicate that the one-dimensional GaN are nanostructure pure single crystals preferentially oriented in the [001] direction. Photoluminescence analysis revealed that the HVPE grown GaN nanowires have high optical quality. English SPRINGER GALLIUM NITRIDE NANORODS HYDRIDE Single crystal growth of one-dimensional GaN nanostructures by halide vapor-phase epitaxy Article 10.1007/s10832-006-9072-4 1 JOURNAL OF ELECTROCERAMICS, v.17, no.2-4, pp.903 - 907 JOURNAL OF ELECTROCERAMICS 17 2-4 903 907 scie scopus 000243610600140 2-s2.0-33847240959 Materials Science, Ceramics Materials Science Article; Proceedings Paper GALLIUM NITRIDE NANORODS HYDRIDE one-dimensional GaN halide vapor-phase epitaxy single crystal growth anisotropic growth