Cho, S. Kim, S. I. Kim, Y. H. Mickevicius, J. Tamulaitis, G. Shur, M. S. 2024-01-21T02:02:43Z 2024-01-21T02:02:43Z 2021-09-01 2006-12 1862-6300 https://pubs.kist.re.kr/handle/201004/134924 We report on optimization of growth conditions by studying the structural and optical properties of ZnO films grown on sapphire substrate by pulsed laser deposition at different growth temperatures. The crystallographic structure and surface morphology were studied by X-ray diffraction and atomic force microscopy, respectively. The flattest surface was observed in the sample grown at substrate temperature of 500 degrees C. The optical characterization was performed by steady state and time resolved photoluminescence spectroscopy. Photoluminescence of the samples was studied at low CW excitation and at high-power-density pulsed excitation in picosecond domain. Stimulated emission was observed at pulsed excitation. Carrier lifetimes were found to significantly depend on the growth temperature reaching the peak value also in the samples grown at approximately 500 degrees C. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. English WILEY-V C H VERLAG GMBH PHOTOLUMINESCENCE LIFETIME SPECTRA EPITAXY BULK Effects of growth temperature on exciton lifetime and structural properties of ZnO films on sapphire substrate Article 10.1002/pssa.200622129 1 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.203, no.15, pp.3699 - 3704 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 15 3699 3704 scie scopus 000243213900011 2-s2.0-33845962604 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article PHOTOLUMINESCENCE LIFETIME SPECTRA EPITAXY BULK ZnO film exciton lifetime growth temperature photoluminescence