Lim, Mi-Hwa Kang, KyongTae Kim, Ho-Gi Kim, Il-Doo Choi, YongWoo Tuller, Harry L. 2024-01-21T02:03:29Z 2024-01-21T02:03:29Z 2021-08-31 2006-11-13 0003-6951 https://pubs.kist.re.kr/handle/201004/134956 The authors report on the role of MgO capping layers in notably reducing leakage currents and improving mobility in ZnO thin film transistors (TFTs) utilizing compatible high-k Bi1.5Zn1.0Nb1.5O7 (BZN) gate insulators. All room temperature processed ZnO based TFTs with stacked MgO/BZN gate insulator exhibited a much enhanced field effect mobility of 5.4 cm(2)/V s with excellent saturation characteristics as compared to that (mu(FE)=1.13 cm(2)/V s) of ZnO based TFTs with BZN gate insulator. This work demonstrates the suitability of MgO/BZN stacked gate insulators in the fabrication of low voltage ZnO based TFTs on plastic substrates. (c) 2006 American Institute of Physics. English AMER INST PHYSICS Low leakage current-stacked MgO/Bi1.5Zn1.0Nb1.5O7 gate insulator - for low voltage ZnO thin film transistors Article 10.1063/1.2387985 1 APPLIED PHYSICS LETTERS, v.89, no.20 APPLIED PHYSICS LETTERS 89 20 scie scopus 000242100200076 2-s2.0-33751086142 Physics, Applied Physics Article