Kim, J. S. Kim, E. K. Song, J. D. Choi, W. J. Lee, J. I. 2024-01-21T02:04:25Z 2024-01-21T02:04:25Z 2021-09-01 2006-11 0374-4884 https://pubs.kist.re.kr/handle/201004/134994 We studied the energy-band structure of InAs/InGaAs/GaAs quantum-dot infrared photodetector (QDIP) with dot-in-a-well structure by performing deep-level transient spectroscopy (DLTS) and photoluminescence measurements. The confined energy levels of InAs/InGaAs quantum dot and the InGaAs/GaAs quantum well in the dot-in-a-well QDIP structure were analyzed. DLTS revealed activation energies of 352 meV and 125 meV, which originated from the confined levels of the quantum dot and quantum well, respectively. These energy levels were also identified as 290 meV and 150 meV in PL measurements, respectively, based on the PL measurements. English KOREAN PHYSICAL SOC GAAS LAYER Study on the energy-band structure of an InAs/InGaAs/GaAs quantum-dot infrared photodetector structure Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.5, pp.2124 - 2127 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49 5 2124 2127 scie scopus kci ART001026532 000242057600011 2-s2.0-33845566817 Physics, Multidisciplinary Physics Article; Proceedings Paper GAAS LAYER deep-level transient spectroscopy quantum dots infrared photodetectors InAs/InGaAs/GaAs energy level