Wi, Jung-Sub Lee, Tae-Yon Jin, Kyung-Bae Hong, Dae Hoon Shin, Kyung Ho Kim, Ki-Bum 2024-01-21T02:04:49Z 2024-01-21T02:04:49Z 2021-08-31 2006-11 1071-1023 https://pubs.kist.re.kr/handle/201004/135010 We propose a patterning method to form nanostructures of a Co/Pd multilayer by using electron-beam lithography with an amorphous silicon (a-Si) layer and two-step etching process. On the Co/Pd multilayer, a-Si is sputter deposited and hydrogen silsesquioxane (HSQ),. the electron-beam resist, is spin coated sequentially. We found that an a-Si intermediate layer between the Co/Pd underlayer and HSQ overlayer improves adhesion of HSQ on the metallic underlayer after electron-beam dosing and chemical development; it also increases etch selectivity between the Co/Pd multilayer and its overlayers. We demonstrate that a Co/Pd multilayer can be patterned successfully as a nanowire array using the suggested process. (c) 2006 American Vacuum Society. English A V S AMER INST PHYSICS PERPENDICULAR MAGNETIC-ANISOTROPY PLATINUM ADHESION OPTIMIZATION FABRICATION LINEWIDTH RESIST PD/CO MASK Electron-beam lithography of Co/Pd multilayer with hydrogen silsesquioxane and amorphous Si intermediate layer Article 10.1116/1.2366615 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.6, pp.2616 - 2620 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 24 6 2616 2620 scie scopus 000243324400022 2-s2.0-33845274282 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Physics, Applied Engineering Science & Technology - Other Topics Physics Article PERPENDICULAR MAGNETIC-ANISOTROPY PLATINUM ADHESION OPTIMIZATION FABRICATION LINEWIDTH RESIST PD/CO MASK E-beam lithography Co/Pd multilayer HSQ