Koo, H. C. Yi, Hyunjung Song, J. D. Chang, Joonyeon Han, S. H. 2024-01-21T02:04:53Z 2024-01-21T02:04:53Z 2021-08-31 2006-11 0038-1101 https://pubs.kist.re.kr/handle/201004/135012 Two-dimensional electron gas layer is essential for a developing spin-FET because of its high mobility and large spin-orbit coupling. The junction properties between a ferromagnet (FM) and a 2-DEG system are the most important factor. Two types of a 2-DEG layer, an InAs and a GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. A GaAs-based channel 2-DEG layer with Al2O3 tunneling layer using a new oxidization method is prepared. During the heat treatment at the furnace, the arsenic gas was evaporated and the top AlAs layer was converted to the aluminum oxide layer. An InAs channel 2-DEG layer with a semiconductor-based barrier and FM junction shows the ohmic behavior. In the potentiometric measurement, a spin-orbit coupling of 2-DEG layer is observed in the interface between a FM and an InAs channel 2-DEG layer, which proves the efficient spin transport junction. (c) 2006 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD MESOSCOPIC SPIN-VALVE ELECTRON-GAS INJECTION Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system Article 10.1016/j.sse.2006.09.021 1 SOLID-STATE ELECTRONICS, v.50, no.11-12, pp.1682 - 1686 SOLID-STATE ELECTRONICS 50 11-12 1682 1686 scie scopus 000243272000003 2-s2.0-33751235309 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article MESOSCOPIC SPIN-VALVE ELECTRON-GAS INJECTION 2-DEG transmission property potentiometric measurement spin-orbit coupling