Seo, J. H. Park, D. S. Cho, S. W. Kim, C. Y. Jang, W. C. Whang, C. N. Yoo, K. -H. Chang, G. S. Pedersen, T. Moewes, A. Chae, K. H. Cho, S. J. 2024-01-21T02:05:10Z 2024-01-21T02:05:10Z 2021-09-01 2006-10-16 0003-6951 https://pubs.kist.re.kr/handle/201004/135024 The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors. (c) 2006 American Institute of Physics. English AMER INST PHYSICS FIELD-EFFECT TRANSISTORS PENTACENE ELECTRONICS CRYSTAL Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors Article 10.1063/1.2363940 1 APPLIED PHYSICS LETTERS, v.89, no.16 APPLIED PHYSICS LETTERS 89 16 scie scopus 000241405200112 2-s2.0-33750162037 Physics, Applied Physics Article FIELD-EFFECT TRANSISTORS PENTACENE ELECTRONICS CRYSTAL organic thin-film transistors x-ray diffraction x-ray emission spectroscopy rubrene/pentacene