Lyeo, Ho-Ki Cahill, David G. Lee, Bong-Sub Abelson, John R. Kwon, Min-Ho Kim, Ki-Bum Bishop, Stephen G. Cheong, Byung-ki 2024-01-21T02:05:23Z 2024-01-21T02:05:23Z 2021-09-01 2006-10-09 0003-6951 https://pubs.kist.re.kr/handle/201004/135032 The thermal conductivity of thin films of the phase-change material Ge2Sb2Te5 is measured in the temperature range of 27 degrees C < T < 400 degrees C using time-domain thermoreflectance. From the low thermal conductivity of amorphous phase, the conductivity increases irreversibly with increasing temperature and undergoes large changes with phase transformations. Thermal transport in the amorphous and early cubic phases can be described by a random walk of vibrational energy, i.e., the minimum thermal conductivity. In the hexagonal phase, the electronic contribution to the thermal conductivity is larger than the lattice contribution. Crystallization by laser processing produces a cubic phase with a lower thermal conductivity than cubic phases produced by thermal annealing; the authors attribute this difference in conductivity to a larger degree of atomic-scale disorder in films that are crystallized on short time scales. (c) 2006 American Institute of Physics. English AMER INST PHYSICS FILMS CRYSTALLIZATION RESISTANCE MEMORY MEDIA Thermal conductivity of phase-change material Ge2Sb2Te5 Article 10.1063/1.2359354 1 APPLIED PHYSICS LETTERS, v.89, no.15 APPLIED PHYSICS LETTERS 89 15 scie scopus 000241247900030 2-s2.0-33750033238 Physics, Applied Physics Article FILMS CRYSTALLIZATION RESISTANCE MEMORY MEDIA thermal conductivity Ge2Sb2Te5 phase change memory phase change material