Soh, Joon-Young Kim, Sang-Pil Kim, Young Keun Lee, Kwang-Ryeol Chung, Yong-Chae Kawasaki, S. Miyake, K. Doi, M. Sahashi, M. 2024-01-21T02:06:32Z 2024-01-21T02:06:32Z 2021-09-01 2006-10 0018-9464 https://pubs.kist.re.kr/handle/201004/135080 To understand the mechanism of current-confined-path formation for the current-perpendicular-to-plane type of giant magnetoresistive devices, we have investigated the evolution of an Al monolayer on the Cu (111) surface both by in situ scanning tunneling microscopy and by molecular dynamics simulation. Ultrathin Al nano-clusters were formed on the plateaus and step (or plateau) edges of the Cu surface in the as-deposited state. Upon annealing at 300 degrees C, Al atoms migrated toward the step edges by surface diffusion. As a consequence, nanometer-sized Cu channels not covered by Al clusters can be formed. These channels could serve as current-confined paths if subsequent mild Al oxidation is provided. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Experimental and simulation study to identify current-confined path in Cu-Al space layer for CPP-GMR spin-valve application Article 10.1109/TMAG.2006.878857 1 IEEE TRANSACTIONS ON MAGNETICS, v.42, no.10, pp.2633 - 2635 IEEE TRANSACTIONS ON MAGNETICS 42 10 2633 2635 scie scopus 000240888700126 2-s2.0-85008010115 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article; Proceedings Paper Cu-Al current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) STM molecular dynamics